Nand Flash
NAND Flash is a non-volatile storage technology that is widely used in a variety of storage devices, such as USB flash drives, solid-state drives (SSDs), and memory cards. It is known for its high storage density, fast write and erase speeds, and low unit cost.
Features of NAND Flash:
1. High storage density: NAND Flash has a smaller cell size, providing higher storage density and is suitable for large data storage.
2. Fast write and erase: The write and erase speed of NAND Flash is much faster than that of NOR Flash, and the erase operation is simpler.
3. Low power consumption: NAND Flash has low power consumption when working, which is suitable for mobile devices.
4. Reliability: NAND Flash has high reliability, and the maximum number of erases and writes per block can reach 1 million times.
Description
Description
| PART NUMBER | CAPACITY | I/O VOLTAGE | OPERATING TEMP | BUS WIDTH | PIN COUNT | PART STATUS CODE | COMPONENT CONFIG | FAMILY | TECHNOLOGY | DRY PACK QTY | PART TYPE | TAPE & REEL QTY |
| MT29F8G08ADAFAWP-AAT:F | 8Gb | 3.3 VOLTS | -40C to +105C | x8 | 48-pin | Contact Factory | 1G x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G08ABAEAH4-IT:E | 2Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | Production | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F32G08ABAAAWP-ITZ:A | 32Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 4G x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G16ABBGAH4-AIT:G | 2Gb | 1.8 VOLTS | -40C to +85C | x16 | 63-ball | Production | 128M x16 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F4G08ABBFAH4-AAT:F | 4Gb | 1.8 VOLTS | -40C to +105C | x8 | 63-ball | Contact Factory | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F128G08AJAAAWP-ITZ:A | 128Gb | 3.3VOLTS | -40C to +85C | x8 | 48-pin | Production | 16G x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G08ABAEAH4:E | 2Gb | 3.3 VOLTS | 0C to +70C | x8 | 63-ball | Production | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F2G01ABAGD12-AAT:G | 2Gb | 3.3 VOLTS | -40C to +105C | x1 | Contact Factory | 2G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | 1000 | |
| MT29F1G08ABBFAH4-AAT:F | 1Gb | 1.8 VOLTS | -40C to +105C | x8 | 63-ball | Contact Factory | 128M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F16G08ABECBM72A3WC1L | 16Gb | 3.3 VOLTS | 0C to +70C | x8 | Contact Factory | 2G x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F1G08ABBEAM68M3WC1L | 1Gb | 3.3VOLTS | -40C to +70C | x8 | Contact Factory | 128M x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F16G08ABCCBH1-AAT:C | 16Gb | 1.8 VOLTS | -40C to +105C | x8 | Contact Factory | 2G x8 | NAND FLASH | MASS FLASH | 1120 | COMPONENT | 2000 | |
| MT29F64G08AFAAAWP-ITZ:A | 64Gb | 3.3VOLTS | -40C to +85C | x8 | 48-pin | Contact Factory | 8G x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F4G08ABBFAH4-AIT:F | 4Gb | 1.8 VOLTS | -40C to +85C | x8 | 63-ball | Contact Factory | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F8G08ABACAWP-AIT:C | 8Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Contact Factory | 1G x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F4G08ABADAH4-AITX:D | 4Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | Contact Factory | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F4G08ABAEAH4:E | 4Gb | 3.3 VOLTS | 0C to +70C | x8 | 63-ball | End of Life | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F4G08ABADAH4-IT:D | 4Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | Production | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F1G08ABAFAH4-AAT:F | 1Gb | 3.3 VOLTS | -40C to +105C | x8 | 63-ball | Production | 128M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F4G08ABAFAH4-AAT:F | 4Gb | 3.3 VOLTS | -40C to +105C | x8 | 63-ball | Production | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F4G08ABAEAH4-ITS:E | 4Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | End of Life | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F2G01ABBGD12-AAT:G | 2Gb | 1.8 VOLTS | -40C to +105C | x1 | Production | 2G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | 2500 | |
| MT29F1G08ABAEAWP-AITX:E | 1Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 128M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F4G01ABBFD12-AUT:F | 4Gb | 1.8 VOLTS | -40C to +125C | x1 | Production | 4G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | ||
| MT29F4G08ABBFAH4-IT:F | 4Gb | 1.8 VOLTS | -40C to +85C | x8 | 63-ball | Production | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F16G08ABACAWP-AAT:C | 16Gb | 3.3 VOLTS | -40C to +105C | x8 | 48-pin | Production | 2G x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F4G08ABADAH4:D | 4Gb | 3.3 VOLTS | 0C to +70C | x8 | 63-ball | Production | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F4G08ABADAWP-IT:D | 4Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 512M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G01ABAGDWB-IT:G | 2Gb | 3.3 VOLTS | -40C to +85C | x1 | Production | 2G x1 | NAND FLASH | SPI FLASH | 1920 | COMPONENT | 4000 | |
| MT29F8G08ABBCAH4-IT:C | 8Gb | 1.8 VOLTS | -40C to +85C | x8 | 63-ball | Production | 1G x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F4G08ABADAWP-AATX:D | 4Gb | 3.3 VOLTS | -40C to +105C | x8 | 48-pin | Production | 512M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G01ABBGD12-AUT:G | 2Gb | 1.8 VOLTS | -40C to +125C | x1 | Production | 2G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | 2500 | |
| MT29F1G08ABAEAWP-IT:E | 1Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 128M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G08ABAGAM79A3WC1L | 2Gb | 3.3VOLTS | 70C | x8 | Production | 256M x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F2G08ABAGAWP-ITE:G | 2Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Contact Factory | 256M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F1G08ABAFAM78A3WC1L | 1Gb | 3.3VOLTS | -40C to +70C | x8 | Contact Factory | 128M x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F1G08ABAEAWP-AATX:E | 1Gb | 3.3 VOLTS | -40C to +105C | x8 | 48-pin | Contact Factory | 128M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G16ABAGAWP-AIT:G | 2Gb | 3.3 VOLTS | -40C to +85C | x16 | 48-pin | Contact Factory | 128M x16 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F1G08ABBFAH4-ITE:F | 1Gb | 1.8 VOLTS | -40C to +85C | x8 | 63-ball | Contact Factory | 128M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F2G08ABAEAWP-IT:E | 2Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 256M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F4G08ABAEAWP-IT:E | 4Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | End of Life | 512M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F64G08AECABH1-10ITZ:A | 64Gb | 1.8 VOLTS | -40C to +85C | x8 | Contact Factory | 8G x8 | NAND FLASH | MASS FLASH | 1120 | COMPONENT | 1000 | |
| MT29F4G01ABAFD12-AAT:F | 4Gb | 3.3 VOLTS | -40C to +105C | x1 | Production | 4G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | 2000 | |
| MT29F2G08ABAEAH4-AITX:E | 2Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | Production | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F8G08ADADAH4-IT:D | 8Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | Production | 1G x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F4G01ABAFDWB-IT:F | 4Gb | 3.3 VOLTS | -40C to +85C | x1 | Production | 4G x1 | NAND FLASH | SPI FLASH | 1920 | COMPONENT | 2000 | |
| MT29F4G08ABADAWP:D | 4Gb | 3.3 VOLTS | 0C to +70C | x8 | 48-pin | Production | 512M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G08ABAEAWP-AITX:E | 2Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 256M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G16ABAEAWP-AIT:E | 2Gb | 3.3 VOLTS | -40C to +85C | x16 | 48-pin | Production | 128M x16 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F8G08ADAFAH4-AAT:F | 8Gb | 3.3 VOLTS | -40C to +105C | x8 | 63-ball | Contact Factory | 1G x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F2G16ABAGAWP-AAT:G | 2Gb | 3.3 VOLTS | -40C to +105C | x16 | 48-pin | Contact Factory | 128M x16 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F1G16ABBFAH4-AAT:F | 1Gb | 1.8 VOLTS | -40C to +105C | x16 | 63-ball | Production | 64M x16 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F4G16ABBFAH4-AAT:F | 4Gb | 1.8 VOLTS | -40C to +105C | x16 | 63-ball | Production | 256M x16 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F2G08ABBEAHC-IT:E | 2Gb | 1.8 VOLTS | -40C to +85C | x8 | 63-ball | Production | 256M x8 | NAND FLASH | MASS FLASH | 1140 | COMPONENT | 1000 |
| MT29F1G01ABBFDWB-IT:F | 1Gb | 1.8 VOLTS | -40C to +85C | x1 | Production | 1G x1 | NAND FLASH | SPI FLASH | 1920 | COMPONENT | 4000 | |
| MT29F2G08ABBGAH4-AAT:G | 2Gb | 1.8 VOLTS | -40C to +105C | x8 | 63-ball | Production | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F4G08ABADAH4-AATX:D | 4Gb | 3.3 VOLTS | -40C to +105C | x8 | 63-ball | Contact Factory | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F2G08ABAGAH4-IT:G | 2Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | Production | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F4G08ABAFAM70A3WC1 | 4Gb | 3.3VOLTS | 70C | x8 | Production | 512M x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F2G08ABBEAH4-AITX:E | 2Gb | 1.8 VOLTS | -40C to +85C | x8 | 63-ball | Production | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F4G16ABBDAH4-IT:D | 4Gb | 1.8 VOLTS | -40C to +85C | x16 | 63-ball | Contact Factory | 256M x16 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F32G08ABEABM73A3WC1L | 32Gb | 3.3/1.8 VOLTS | 70C | x8 | Contact Factory | 4G x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F4G08ABAFAWP-IT:F | 4Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 512M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G08ABAGAH4-ITE:G | 2Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | Contact Factory | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F8G01ADAFD12-AAT:F | 8Gb | 3.3 VOLTS | -40C to +105C | x1 | Production | 8G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | 2000 | |
| MT29F1G08ABAEAM68M3WC1L | 1Gb | 3.3 VOLTS | 70C | x8 | Contact Factory | 128M x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F2G08ABAGAWP-AIT:G | 2Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 256M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F4G01ABBFDWB-IT:F | 4Gb | 1.8 VOLTS | -40C to +85C | x1 | Production | 4G x1 | NAND FLASH | SPI FLASH | 1920 | COMPONENT | 2000 | |
| MT29F8G08ABACAH4-IT:C | 8Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | Production | 1G x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F2G08ABBGAH4-IT:G | 2Gb | 1.8 VOLTS | -40C to +85C | x8 | 63-ball | Production | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F2G16ABBEAH4-AAT:E | 2Gb | 1.8 VOLTS | -40C to +105C | x16 | 63-ball | Contact Factory | 128M x16 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F2G08ABAGAWP-IT:G | 2Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 256M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F4G01ABBFD12-AAT:F | 4Gb | 1.8 VOLTS | -40C to +105C | x1 | Production | 4G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | 2000 | |
| MT29F2G08ABAGAWP-AAT:G | 2Gb | 3.3 VOLTS | -40C to +105C | x8 | 48-pin | Production | 256M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F1G08ABAEAH4-AATX:E | 1Gb | 3.3 VOLTS | -40C to +105C | x8 | 63-ball | Contact Factory | 128M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F2G01ABBGDM79A3WC1L | 2Gb | 1.8VOLTS | 70C | x1 | Production | 2G x1 | NAND FLASH | SPI FLASH | DIE | |||
| MT29F8G08ABACAWP-IT:C | 8Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 1G x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F4G08ABAFAWP-AAT:F | 4Gb | 3.3 VOLTS | -40C to +105C | x8 | 48-pin | Contact Factory | 512M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F1G01ABBFD12-AAT:F | 1Gb | 1.8 VOLTS | -40C to +105C | x1 | Production | 1G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | 2000 | |
| MT29F4G08ABBDAH4-IT:D | 4Gb | 1.8 VOLTS | -40C to +85C | x8 | 63-ball | Production | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F4G08ABADAWP-AITX:D | 4Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 512M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G08ABAGAH4-AIT:G | 2Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | Contact Factory | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F256G08AUCABH3-10ITZ:A | 256Gb | 1.8 VOLTS | -40C to +85C | x8 | Production | 32G x8 | NAND FLASH | MASS FLASH | 1120 | COMPONENT | 1000 | |
| MT29F2G01ABAGDM79A3WC1L | 2Gb | 3.3VOLTS | 70C | x1 | Production | 2G x1 | NAND FLASH | SPI FLASH | DIE | |||
| MT29F1G08ABAEAWP:E | 1Gb | 3.3 VOLTS | 0C to +70C | x8 | 48-pin | Production | 128M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F4G08ABADAWP-ITX:D | 4Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Production | 512M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F1G08ABAFAWP-AAT:F | 1Gb | 3.3 VOLTS | -40C to +105C | x8 | 48-pin | Contact Factory | 128M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G08ABAEAWP-AATX:E | 2Gb | 3.3 VOLTS | -40C to +105C | x8 | 48-pin | Contact Factory | 256M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G08ABAEAWP:E | 2Gb | 3.3 VOLTS | 0C to +70C | x8 | 48-pin | Production | 256M x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F2G01ABBGDWB-IT:G | 2Gb | 1.8 VOLTS | -40C to +85C | x1 | Production | 2G x1 | NAND FLASH | SPI FLASH | 1920 | COMPONENT | 4000 | |
| MT29F4G08ABBDAHC-IT:D | 4Gb | 1.8 VOLTS | -40C to +85C | x8 | 63-ball | Production | 512M x8 | NAND FLASH | MASS FLASH | 1140 | COMPONENT | 1000 |
| MT29F2G08ABBGAM79A3WC1L | 2Gb | 1.8 VOLTS | 70C | x8 | Production | 256M x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F8G08ABBCAM71M3WC1L | 8Gb | 1.8/1.2 VOLTS | 0C to +70C | x8 | Production | 1G x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F2G08ABAGAH4-AAT:G | 2Gb | 3.3 VOLTS | -40C to +105C | x8 | 63-ball | Production | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F1G01ABAFDSF-AAT:F | 1Gb | 3.3 VOLTS | -40C to +105C | x1 | Contact Factory | 1G x1 | NAND FLASH | MASS FLASH | 1440 | COMPONENT | 1000 | |
| MT29F2G08ABBEAH4-IT:E | 2Gb | 1.8 VOLTS | -40C to +85C | x8 | 63-ball | Production | 256M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F4G08ABAFAH4-IT:F | 4Gb | 3.3 VOLTS | -40C to +85C | x8 | 63-ball | Production | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 2000 |
| MT29F2G01ABAGD12-AUT:G | 2Gb | 3.3 VOLTS | -40C to +125C | x1 | Production | 2G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | 2500 | |
| MT29F8G01ADBFD12-AAT:F | 8Gb | 1.8 VOLTS | -40C to +105C | x1 | Production | 8G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | 2000 | |
| MT29F4G08ABBDAH4:D | 4Gb | 1.8 VOLTS | 0C to +70C | x8 | 63-ball | Production | 512M x8 | NAND FLASH | MASS FLASH | 1260 | COMPONENT | 1000 |
| MT29F1G01ABAFDWB-IT:F | 1Gb | 3.3 VOLTS | -40C to +85C | x1 | Production | 1G x1 | NAND FLASH | SPI FLASH | 1920 | COMPONENT | 4000 | |
| MT29F4G08ABBFAM70A3WC1 | 4Gb | 1.8VOLTS | 70C | x8 | Production | 512M x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F4G01ABAFD12-AUT:F | 4Gb | 3.3 VOLTS | -40C to +125C | x1 | Production | 4G x1 | NAND FLASH | SPI FLASH | 1122 | COMPONENT | 2000 | |
| MT29F8G08ABACAM71M3WC1L | 8Gb | 3.3 VOLTS | 70C | x8 | Production | 1G x8 | NAND FLASH | MASS FLASH | DIE | |||
| MT29F2G16ABBEAHC-AIT:E | 2Gb | 1.8 VOLTS | -40C to +85C | x16 | 63-ball | Production | 128M x16 | NAND FLASH | MASS FLASH | 1140 | COMPONENT | 1000 |
| MT29F8G08ADAFAWP-AIT:F | 8Gb | 3.3 VOLTS | -40C to +85C | x8 | 48-pin | Contact Factory | 1G x8 | NAND FLASH | MASS FLASH | 960 | COMPONENT | 1000 |
| MT29F32G08ABCABH1-10ITZ:A | 32Gb | 1.8 VOLTS | -40C to +85C | x8 | Production | 4G x8 | NAND FLASH | MASS FLASH | 1120 | COMPONENT | 1000 |
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